Variable resistance to reduce gate votlage oscillations in gallium nitride transistors
US11152497B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 24, 2018 |
| Grant date | Oct 19, 2021 |
| Priority date | — |
| Expiry date | Dec 8, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/257
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A semiconductor transistor device includes a GaN transistor including a drain, a gate, and a source, the GaN transistor having a driving voltage applied across the gate and the source and configured to switch between an on-voltage associated with an on-state of the GaN transistor and an off-voltage associated with an off-state of the GaN transistor. The semiconductor transistor device further includes a variable gate-source resistor connected between the gate and the source and having a variable resistance that varies in response to changes in the driving voltage when switching between the on-state and the off-state of the GaN transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.