Resistive random access memory

US11152566B2 · kind B2 · utility

Assignee

• UNITED MICROELECTRONICS CORP. · TW

Inventors

• Po-Yen Hsu · New Taipei, TW
• Bo-Lun Wu · 埔鹽鄉, TW
• Ping Wang
• Ming-Che Lin · Zhuolan Township, TW
• Yu-Ting Chen · Taipei, TW
• Chang-Tsung Pai · Taichung, TW
• Shao-Ching Liao · Taichung, TW
• Chi-Ching Liu · Taichung, TW

Key dates

• Filing date: Dec 10, 2019
• Grant date: Oct 19, 2021
• Expiry date: Dec 17, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8833

Abstract

A resistive random access memory including first and second electrodes, a resistance variable layer, first and second metal layers and a resistance stabilizing layer is provided. The second electrode is disposed on the first electrode. The resistance variable layer is disposed between the first and second electrodes. The first metal layer is disposed between the resistance variable layer and the second electrode. The second metal layer is disposed between the first metal layer and the second electrode. The resistance stabilizing layer is disposed between the first and second metal layers. The oxygen content of the resistance variable layer is higher than that of the first metal layer, the oxygen content of the first metal layer is higher than that of the resistance stabilizing layer, the oxygen content of the resistance stabilizing layer is higher than that of the second metal layer.