Patent · US Active

Magnetic field sensor using in situ solid source graphene and graphene induced anti-ferromagnetic coupling and spin filtering

US11156678B2 · kind B2 · utility

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1References

10Claims

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Assignee

The Government of the United States of America, as represented by the Secretary of the Navy · US

Inventors

Olaf M. J. van't Erve · Falls Church, US
Enrique Cobas · Capitol Heights, US
Shu-Fan Cheng · Silver Spring, US
Berend T. Jonker · Waldorf, US

Key dates

Filing date	Feb 13, 2019
Grant date	Oct 26, 2021
Priority date	—
Expiry date	Jul 11, 2039

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T428/1114
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

A magnetic field sensor based on two anti-ferromagnetically coupled magnetic layers separated by multilayer graphene, prepared in a single sputter chamber without a vacuum break.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.