Silicon compounds and methods for depositing films using same
US11158498B2 · kind B2 · utility
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17Claims
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Key dates
| Filing date | Jun 18, 2019 |
| Grant date | Oct 26, 2021 |
| Priority date | — |
| Expiry date | Jul 11, 2039 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB05D3/067
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A chemical vapor deposition method for producing a dielectric film, the method comprising: providing a substrate into a reaction chamber; introducing gaseous reagents into the reaction chamber wherein the gaseous reagents comprise a silicon precursor comprising an silicon compound having Formula I as defined herein and applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a film on the substrate. The film as deposited is suitable for its intended use without an optional additional cure step applied to the as-deposited film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.