Non-volatile memory bit cells with non-rectangular floating gates
US11158643B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Nov 26, 2019 |
| Grant date | Oct 26, 2021 |
| Priority date | — |
| Expiry date | Jan 4, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/60
Abstract
Structures for a non-volatile memory bit cell and methods of forming a structure for a non-volatile memory bit cell. A field-effect transistor has a channel region and a first gate electrode positioned over the channel region. A capacitor includes a second gate electrode that is coupled to the first gate electrode to define a floating gate. The first gate electrode has a non-rectangular shape.
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