Semiconductor device structure with anti-acid layer and method for forming the same
US11158659B2 · kind B2 · utility
1Cited by
18References
17Claims
0Family size
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Key dates
| Filing date | Jul 30, 2018 |
| Grant date | Oct 26, 2021 |
| Priority date | — |
| Expiry date | May 9, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8037
Abstract
A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes an interconnect structure formed over a substrate and a passivation layer formed over the interconnect structure. The semiconductor device structure also includes an anti-acid layer formed in the passivation layer and a bonding layer formed on the anti-acid layer and the passivation layer. The anti-acid layer has a thickness that is greater than about 140 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.