Perovskite film layer, device and preparation method for effectively improving efficiency of light-emitting device
US11158830B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 5, 2018 |
| Grant date | Oct 26, 2021 |
| Priority date | — |
| Expiry date | Dec 5, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2102/351
Abstract
The disclosure discloses a perovskite film layer, a device and a preparation method for effectively improving the efficiency of perovskite optoelectronics. The perovskite film layer consists of a layer with discontinuous, irregularly distributed perovskite crystal grains and an organic insulating layer with a low refractive index embedded between the perovskite crystal grains. The perovskite crystal grains form a plurality of convex portions, and the organic insulating layer forms a plurality of concave portions between the convex portions. By adding an excess of an alkylammonium salt and/or an organic molecule with a specific functional group to perovskite precursor solution, a concave-convex film layer structure is spontaneously formed, and an upper charge transport layer and an electrode form pleated concave-convex structures. Such a special perovskite thin film structure formed by a simple solution method can effectively improve the light-outcoupling efficiency and enhance the performance of the perovskite light-emitting device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.