Laser diode with defect blocking layer
US11158995B2 · kind B2 · utility
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2References
10Claims
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Key dates
| Filing date | May 29, 2019 |
| Grant date | Oct 26, 2021 |
| Priority date | — |
| Expiry date | May 29, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/173
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A laser diode is provided, including at least a defect blocking layer deposited between the GaAs substrate and the active layer, so that the crystal defects of the GaAs substrate can be blocked or reduced from propagation to the active layer when the epitaxial layer is formed on the GaAs substrate. As such, the crystal quality of the active layer can be improved, thereby improving the reliability and optical property of the laser diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.