Patent · US Active

Quartz glass crucible, manufacturing method thereof, and manufacturing method of silicon single crystal using quartz glass crucible

US11162186B2 · kind B2 · utility

2Cited by
2References
4Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 24, 2017
Grant dateNov 2, 2021
Priority date
Expiry dateMar 26, 2038

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC30B15/002
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

In an exemplary embodiment, a quartz glass crucible 1 includes: a cylindrical crucible body 10 which has a bottom and is made of quartz glass; and a first crystallization-accelerator-containing coating film 13A which is formed on an inner surface 10a so as to cause an inner crystal layer composed of an aggregate of dome-shaped or columnar crystal grains to be formed on a surface-layer portion of the inner surface 10a of the crucible body 10 by heating during a step of pulling up the silicon single crystal by a Czochralski method. The quartz glass crucible is capable of withstanding a single crystal pull-up step undertaken for a very long period of time.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.