Use of silicon structure former with organic substituted hardening additive compounds for dense OSG films
US11164739B2 · kind B2 · utility
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Key dates
| Filing date | Feb 6, 2019 |
| Grant date | Nov 2, 2021 |
| Priority date | — |
| Expiry date | May 4, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02348
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to a chemical vapor deposition method for depositing an organosilicate film on a substrate, a gaseous organosilicate composition is introduced into a vacuum chamber. The gaseous organosilicate composition includes a first silicon-containing precursor selected from an organosilane and an organosiloxane, and further includes at least one second silicon-containing precursor selected from compounds represented by the structure of Formula I: R1nSi(OR2)4-n (I),
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