Semiconductor structures in a wide gate pitch region of semiconductor devices
US11164794B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 4, 2019 |
| Grant date | Nov 2, 2021 |
| Priority date | — |
| Expiry date | Aug 4, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0149
Abstract
A semiconductor device is provided that includes an active region above a substrate, a first gate structure, a second gate structure, a first semiconductor structure, a second semiconductor structure and a semiconductor bridge. The first gate semiconductor and the second semiconductor structure are in the active region and between the first and the second gate structures. The first semiconductor structure is adjacent to the first gate structure and a second semiconductor structure is adjacent to the second gate structure. The semiconductor bridge is in the active region electrically coupling the first and the second semiconductor structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.