Structure of semiconductor device and method for bonding two substrates
US11164822B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2020 |
| Grant date | Nov 2, 2021 |
| Priority date | — |
| Expiry date | Sep 28, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/80986
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure of semiconductor device is provided. The structure includes a first bonding pattern, formed on a first substrate. A first grating pattern is disposed on the first substrate, having a plurality of first bars extending along a first direction. A second bonding pattern is formed on a second substrate. A second grating pattern, disposed on the second substrate, having a plurality of second bars extending along the first direction. The first bonding pattern is bonded to the second bonding pattern. One of the first grating pattern and the second grating pattern is stacked over and overlapping at the first direction with another one of the first grating pattern and the second grating pattern. A first gap between adjacent two of the first bars is different from a second gap between adjacent two of the second bars.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.