DRAM capacitor module

US11164938B2 · kind B2 · utility

Assignee

• Micromaterials LLC · US

Inventors

• Uday Mitra · Cupertino, US
• Regina Freed · Los Altos, US
• Ho-yung David Hwang · Hsinchu, TW
• Sanjay Natarajan · Portland, US
• Lequn Liu · Boise, US

Key dates

• Filing date: Mar 23, 2020
• Grant date: Nov 2, 2021
• Expiry date: Mar 23, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/716

Abstract

Methods of forming and processing semiconductor devices are described. Certain embodiments relate to the formation of self-aligned DRAM capacitors. More particularly, certain embodiments relate to the formation of self-aligned DRAM capacitors utilizing the formation of self-aligned growth pillars. The pillars lead to greater capacitor heights, increase critical dimension uniformity, and self-aligned bottom and top contacts.