Patent · US Active

Radiation-emitting semiconductor chip

US11164994B2 · kind B2 · utility

4Cited by
14References
4Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 26, 2017
Grant dateNov 2, 2021
Priority date
Expiry dateJun 26, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/835

Abstract

A radiation-emitting semiconductor chip is disclosed. In an embodiment, a radiation-emitting semiconductor chip includes a semiconductor body configured to generate radiation, a first contact layer having a first contact area for external electrical contacting the semiconductor chip and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area for external electrical contacting the semiconductor chip and a second contact finger structure connected to the second contact area, wherein the first contact finger structure and the second contact finger structure overlap in places, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer arranged in places between the connection layer and the current distribution layer, wherein the insulation layer has at least one opening.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.