Low repetition rate infrared tunable femtosecond laser source
US11165218B2 · kind B2 · utility
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37Claims
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Key dates
| Filing date | Jan 31, 2020 |
| Grant date | Nov 2, 2021 |
| Priority date | — |
| Expiry date | Apr 21, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S3/302
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present application discloses a cavity dumped low repetition rate infrared tunable femtosecond laser source configured to produce pulses of 200 femtoseconds or less with a peak power of four megawatts or more for use in a variety of applications including multi-photon microscopy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.