Semiconductor light source

US11165223B2 · kind B2 · utility

Assignee

• Osram OLED GMBH · DE

Inventors

• Bernhard Stojetz · Wiesent, DE
• Alfred Lell · Maxhütte-Haidhof, DE
• Christoph Eichler · Donaustauf, DE
• Andreas Loeffler · Neutraubling, DE

Key dates

• Filing date: Jun 2, 2020
• Grant date: Nov 2, 2021
• Expiry date: Jun 2, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8515
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A semiconductor light source is disclosed. In one embodiment, a semiconductor light source includes at least one semiconductor laser configured to generate a primary radiation and at least one conversion element configured to generate a longer-wave visible secondary radiation from the primary radiation, wherein the conversion element includes a semiconductor layer sequence having one or more quantum well layers, wherein, in operation, the primary radiation is irradiated into the semiconductor layer sequence parallel to a growth direction thereof, with a tolerance of at most 15°, wherein, in operation, the semiconductor layer sequence is homogeneously illuminated with the primary radiation, and wherein a growth substrate of the semiconductor layer sequence is located between the semiconductor layer sequence and the semiconductor laser, the growth substrate being oriented perpendicular to the growth direction.