Chemical-mechanical polishing composition comprising benzotriazole derivatives as corrosion inhibitors

US11168239B2 · kind B2 · utility

Assignee

• BASF SE

Inventors

• Robert REICHARDT · Ludwigshafen am Rhein, DE
• Martin Kaller · Mannheim, DE
• Michael Lauter · Mannheim, DE
• Yuzhuo Li
• Andreas Klipp · Lambsheim, DE

Key dates

• Filing date: Apr 28, 2020
• Grant date: Nov 9, 2021
• Expiry date: Apr 28, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/461
• WIPO field: Basic materials chemistry
• WIPO sector: Chemistry

Abstract

A chemical-mechanical polishing (CMP) composition is provided comprising (A) one or more compounds selected from the group of benzotriazole derivatives which act as corrosion inhibitors and (B) inorganic particles, organic particles, or a composite or mixture thereof. The invention also relates to the use of certain compounds selected from the group of benzotriazole derivatives as corrosion inhibitors, especially for increasing the selectivity of a chemical mechanical polishing (CMP) composition for the removal of tantalum or tantalum nitride from a substrate for the manufacture of a semiconductor device in the presence of copper on said substrate.