Impurity control during formation of aluminum nitride crystals and thermal treatment of aluminum nitride crystals
US11168411B2 · kind B2 · utility
2Cited by
2References
29Claims
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Key dates
| Filing date | Jun 18, 2019 |
| Grant date | Nov 9, 2021 |
| Priority date | — |
| Expiry date | Jul 19, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/815
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In various embodiments, single-crystal aluminum nitride boules and substrates are formed from the vapor phase with controlled levels of impurities such as carbon. Single-crystal aluminum nitride may be heat treated via quasi-isothermal annealing and controlled cooling to improve its ultraviolet absorption coefficient and/or Urbach energy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.