Patent assignee · US · COMPANY

CRYSTAL IS, INC.

96Patents
90Active
96Granted
54Portfolio score

Filing activity: Sep 20, 2002 → Feb 24, 2023 · 10 expiring within 5 years

Most-cited patents

PatentTitleAreaCited byStatus
US8080833B2 Thick pseudomorphic nitride epitaxial layers Electricity 43 Active
US8323406B2 Defect reduction in seeded aluminum nitride crystal growth Emerging Cross-Sectional Technologies 42 Active
US6770135B2 Method and apparatus for producing large, single-crystals of aluminum nitride Emerging Cross-Sectional Technologies 36 Expired
US7638346B2 Nitride semiconductor heterostructures and related methods Electricity 35 Active
US6719843B2 Powder metallurgy tungsten crucible for aluminum nitride crystal growth Emerging Cross-Sectional Technologies 32 Expired
US9299880B2 Pseudomorphic electronic and optoelectronic devices having planar contacts Electricity 32 Active
US7037838B2 Method for polishing a substrate surface Electricity 31 Expired
US9437430B2 Thick pseudomorphic nitride epitaxial layers Electricity 30 Active
US8962359B2 Photon extraction from nitride ultraviolet light-emitting devices Electricity 29 Active
US7211146B2 Powder metallurgy crucible for aluminum nitride crystal growth Emerging Cross-Sectional Technologies 29 Expired
US8222650B2 Nitride semiconductor heterostructures and related methods Electricity 28 Active
US9293670B2 Ultraviolet light-emitting devices and methods Electricity 27 Active
US7087112B1 Nitride ceramics to mount aluminum nitride seed for sublimation growth Chemistry; Metallurgy 24 Expired
US7641735B2 Doped aluminum nitride crystals and methods of making them Electricity 23 Active
US8012257B2 Methods for controllable doping of aluminum nitride bulk crystals Chemistry; Metallurgy 22 Active
US7776153B2 Method and apparatus for producing large, single-crystals of aluminum nitride Electricity 21 Active
US8123859B2 Method and apparatus for producing large, single-crystals of aluminum nitride Electricity 21 Active
US8545629B2 Method and apparatus for producing large, single-crystals of aluminum nitride Emerging Cross-Sectional Technologies 20 Active
US8088220B2 Deep-eutectic melt growth of nitride crystals Chemistry; Metallurgy 18 Active
US8747552B2 Doped aluminum nitride crystals and methods of making them Electricity 18 Active
US8349077B2 Large aluminum nitride crystals with reduced defects and methods of making them Emerging Cross-Sectional Technologies 15 Active
US8834630B2 Defect reduction in seeded aluminum nitride crystal growth Emerging Cross-Sectional Technologies 14 Active
US8580035B2 Large aluminum nitride crystals with reduced defects and methods of making them Emerging Cross-Sectional Technologies 14 Active
US8896020B2 Method and apparatus for producing large, single-crystals of aluminum nitride Emerging Cross-Sectional Technologies 13 Active
US9028612B2 Growth of large aluminum nitride single crystals with thermal-gradient control Chemistry; Metallurgy 8 Active

Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.