Multi-bit-per-cell three-dimensional resistive random-access memory (3D-RRAM)
US11170863B2 · kind B2 · utility
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6Claims
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Key dates
| Filing date | Jul 6, 2020 |
| Grant date | Nov 9, 2021 |
| Priority date | — |
| Expiry date | Jul 6, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2216/12
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention discloses a multi-bit-per-cell three-dimensional resistive random-access memory (3D-RRAMMB). It comprises a plurality of RRAM cells stacked above a semiconductor substrate. Each RRAM cell comprises a RRAM layer, which is switched from a high-resistance state to a low-resistance state during programming. By adjusting the programming current, the programmed RRAMs have different resistances.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.