Semiconductor memory devices and memory systems
US11170868B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 1, 2020 |
| Grant date | Nov 9, 2021 |
| Priority date | — |
| Expiry date | May 1, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/1204
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device includes a memory cell array and an interface circuit including an error correction code (ECC) engine. The memory cell array includes a plurality of volatile memory cells, a normal cell region and a parity cell region. The interface circuit, in a write operation, receives main data and first parity data from an external device, the first parity data being generated based on a first ECC and stores the main data in the normal cell region and the first parity data in the parity cell region. The interface circuit, in a read operation, performs an ECC decoding on the main data using a second ECC, based on the first parity data to correct a first type of error in the main data. The second ECC has a parity check matrix which is the same as a parity check matrix of the first ECC.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.