Composite semiconductor substrate, semiconductor device and method for manufacturing the same
US11171039B2 · kind B2 · utility
0Cited by
10References
20Claims
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Key dates
| Filing date | Mar 29, 2018 |
| Grant date | Nov 9, 2021 |
| Priority date | — |
| Expiry date | Mar 29, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02255
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A composite semiconductor substrate includes a semiconductor substrate, an oxygen-doped crystalline semiconductor layer and an insulative layer. The oxygen-doped crystalline semiconductor layer is over the semiconductor substrate, and the oxygen-doped crystalline semiconductor layer includes a crystalline semiconductor material and a plurality of oxygen dopants. The insulative layer is over the oxygen-doped crystalline semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.