Integrated circuits having dielectric layers including an anti-reflective coating

US11171200B2 · kind B2 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Poornika Fernandes · Sachse, US
• David M. Curran · Dublin, IE
• Stephen Arion Meisner · St. Cloud, US
• Bhaskar Srinivasan · Boise, US
• Guruvayurappan Mathur · Plano, US
• Scott Jessen · Allen, US
• Shih Chang Chang · Cupertino, US
• Russell Fields · Richardson, US
• Thomas Terrance Lynch · Allen, US

Key dates

• Filing date: Sep 26, 2019
• Grant date: Nov 9, 2021
• Expiry date: Sep 26, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02274
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In some examples, an integrated circuit comprises a substrate; a first metal layer and a second metal layer positioned above the substrate; a first composite dielectric layer located on the first metal layer, wherein the first composite dielectric layer comprises a first anti-reflective coating; a second composite dielectric layer positioned on the second metal layer, wherein the second composite dielectric layer comprises a second anti-reflective coating; and a capacitor metal layer disposed over the first composite dielectric layer.