Patent · US Active

Semiconductor device and method for manufacturing a semiconductor device

US11171230B2 · kind B2 · utility

1Cited by

4References

11Claims

0Family size

Assignee

Infineon Technologies Austria AG · AT

Inventors

Anton Mauder · Kolbermoor, DE
Johannes Georg Laven · Taufkirchen, DE
Hans-Joachim Schulze · Taufkirchen, DE
Werner Schustereder · Villach, AT

Key dates

Filing date	Oct 19, 2018
Grant date	Nov 9, 2021
Priority date	—
Expiry date	Oct 19, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/256
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In an embodiment, a semiconductor device is provided. The semiconductor device includes: a semiconductor body of a first conductivity type having opposing first and second major surfaces; a gate arranged in a trench extending into the semiconductor body from the first major surface; a body region of a second conductivity type; a source region of the first conductivity type arranged on the body region and having first and second dopant species. The source region forms a pn-junction with the body junction, the pn-junction being arranged at a depth dpn from the first major surface, wherein 50 nm<dpn<300 nm. A drain region of the first conductivity type is arranged in the semiconductor body under the trench.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.