X-ray dark-field in-line inspection for semiconductor samples
US11175243B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 4, 2021 |
| Grant date | Nov 16, 2021 |
| Priority date | — |
| Expiry date | Feb 4, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An x-ray imaging/inspection system includes an x-ray source having a plurality of sub-sources in thermal communication with a substrate. The system further includes a first grating positioned to receive at least some of the x-rays from the x-ray source, a stage configured to hold a sample positioned to receive at least some of the x-rays from the x-ray source, at least one x-ray detector, and a second grating having periodic structures. The x-ray source, the first grating, and the second grating are configured such that a ratio of a pitch p0 of the plurality of sub-sources to a pitch p2 of the periodic structures of the second grating is substantially equal to a ratio of a distance dS-G1 between the plurality of sub-sources and the first grating and a distance dG1-G2 between the first grating and the second grating: (p0/p2)=(dS-G1/dG1-G2).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.