Photonic device and fabrication method thereof
US11175452B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 11, 2020 |
| Grant date | Nov 16, 2021 |
| Priority date | — |
| Expiry date | Aug 11, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B6/3826
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for fabricating a photonic device is provided. The method includes patterning a semiconductor layer to form a waveguide structure, a semiconductor structure connected to the waveguide structure, and a dummy semiconductor structure disconnected from the waveguide structure and the semiconductor structure; epitaxially growing an epitaxial semiconductor feature over the semiconductor structure and a dummy epitaxial semiconductor feature over the dummy semiconductor structure; depositing a first capping film over the epitaxial semiconductor feature and the dummy epitaxial semiconductor feature; depositing a second capping film over the first capping film, wherein an oxide concentration of the second capping film is greater than an oxide concentration of the first capping film; and patterning the first and second capping films to form at least a dummy composite capping layer over the dummy epitaxial semiconductor feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.