Photosensitive stacked structure
US11175582B2 · kind B2 · utility
0Cited by
7References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2016 |
| Grant date | Nov 16, 2021 |
| Priority date | — |
| Expiry date | Dec 19, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/311
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
This disclosure relates to a photosensitive stacked structure that includes first and second layers, in which the first layer is a photosensitive, dielectric layer and the second layer is a photosensitive layer. The dissolution rate of the first layer in a developer is less than the dissolution rate of the second layer in the developer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.