Integrated circuit structure with semiconductor-based isolation structure and methods to form same
US11177158B2 · kind B2 · utility
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3References
14Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 25, 2020 |
| Grant date | Nov 16, 2021 |
| Priority date | — |
| Expiry date | Feb 25, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/115
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the disclosure provide an integrated circuit (IC) structure, including a semiconductor-based isolation structure on a substrate. A shallow trench isolation (STI) structure may be positioned on the semiconductor-based isolation structure. An active semiconductor region is on the substrate and adjacent each of the semiconductor-based isolation structure and the STI structure. The active semiconductor region includes a doped semiconductor material. At least one device on the active semiconductor region may be horizontally distal to the STI structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.