Semiconductor device and method of manufacture
US11177177B2 · kind B2 · utility
0Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2019 |
| Grant date | Nov 16, 2021 |
| Priority date | — |
| Expiry date | Jan 8, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and method for forming the semiconductor device are provided. A first layer is formed over a semiconductor layer, and a first patterned mask is formed over the first layer. A cyclic etch process is then performed to define a second patterned mask in the first layer. The cyclic etch process includes a first phase to form a polymer layer over the first patterned mask and a second phase to remove the polymer layer and to remove a portion of the first layer. A portion of the semiconductor layer is removed using the second patterned mask to define a fin from the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.