Fo-Ju Lin
8Patents
0h-index
13Co-inventors
31Inventor score
Filing activity: Oct 3, 2019 → Dec 15, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11373878B2 | Technique for semiconductor manufacturing | Electricity | 0 | Active |
| US12376337B2 | Air inner spacers | Electricity | 0 | Active |
| US12336252B2 | Inner spacer formation in multi-gate transistors | Electricity | 0 | Active |
| US11830928B2 | Inner spacer formation in multi-gate transistors | Electricity | 0 | Active |
| US12218219B2 | Spacer structure for semiconductor device | Electricity | 0 | Active |
| US11177177B2 | Semiconductor device and method of manufacture | Electricity | 0 | Active |
| US11107904B2 | Inner spacer formation in multi-gate transistors | Electricity | 0 | Active |
| US12198939B2 | Technique for semiconductor manufacturing | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.