Three-dimensional memory device and method for manufacturing the same
US11177272B2 · kind B2 · utility
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17Claims
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Key dates
| Filing date | May 13, 2020 |
| Grant date | Nov 16, 2021 |
| Priority date | — |
| Expiry date | May 13, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/35
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A three-dimensional (3D) memory device is provided and includes a substrate, an alternating stack and a channel structure. The alternating stack is disposed on the substrate, and the alternating stack includes a plurality of conductive layers and a plurality of air gap layers alternately stacked. The channel structure is disposed on the substrate and extends vertically through the conductive layers and the air gap layers. The alternating stack further includes a plurality of etching stop blocks between the air gap layers and the channel structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.