Semiconductor devices
US11177282B2 · kind B2 · utility
1Cited by
11References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 6, 2020 |
| Grant date | Nov 16, 2021 |
| Priority date | — |
| Expiry date | Jul 6, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices are provided. A semiconductor device includes a substrate. The semiconductor device includes a stack structure including conductive layers stacked on the substrate. Moreover, the semiconductor device includes a dummy structure penetrating a stepped region of the stack structure. A portion of the dummy structure includes a first segment and a second segment. The first segment extends in a first direction in a plane parallel to an upper surface of the substrate. The second segment protrudes from the first segment in a second direction, in the plane, that intersects the first direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.