Electronic device and method of manufacturing the same
US11177283B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2020 |
| Grant date | Nov 16, 2021 |
| Priority date | — |
| Expiry date | Jun 5, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06N3/065
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided are an electronic device and a method of manufacturing the same. The electronic device may include a first device provided on a first region of a substrate; and a second device provided on a second region of the substrate, wherein the first device may include a first domain layer including a ferroelectric domain and a first gate electrode on the first domain layer, and the second device may include a second domain layer including a ferroelectric domain and a second gate electrode on the second domain layer. The first domain layer and the second domain layer may have different characteristics from each other at a polarization change according to an electric field. At the polarization change according to the electric field, the first domain layer may have substantially a non-hysteretic behavior characteristic and the second domain layer may have a hysteretic behavior characteristic.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.