CMOS image sensor structure with microstructures formed on semiconductor layer

US11177302B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Chien Nan Tu
• Yu-Lung Yeh · Kaohsiung, TW
• Hsing-Chih Lin · Tainan, TW
• Chien-Chang Huang · Tainan, TW
• Shih-Shiung Chen · Baoshan, TW

Key dates

• Filing date: Dec 13, 2018
• Grant date: Nov 16, 2021
• Expiry date: Dec 13, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/8053

Abstract

A semiconductor device includes a device layer, a semiconductor layer, a sensor element, a dielectric layer, a color filter layer, and a micro-lens. The semiconductor layer is over the device layer. The semiconductor layer has a plurality of microstructures thereon. Each of the microstructures has a substantially triangular cross-section. The sensor element is under the microstructures of the semiconductor layer and is configured to sense incident light. The dielectric layer is over the microstructures of the semiconductor layer. The color filter layer is over the dielectric layer. The micro-lens is over the color filter layer.