Heterojunction bipolar transistor

US11177345B1 · kind B1 · utility

Assignee

• GLOBALFOUNDRIES U.S. Inc. · US

Inventors

• Henry L. Aldridge, Jr. · Malta, US
• Anthony K. Stamper · Williston, US
• Jeonghyun Hwang · Ithaca, US
• Johnatan A. Kantarovsky · South Burlington, US

Key dates

• Filing date: Jun 5, 2020
• Grant date: Nov 16, 2021
• Expiry date: Jun 5, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/231

Abstract

The present disclosure relates to semiconductor structures and, more particularly, to heterojunction bipolar transistors and methods of manufacture. The structure includes: a first semiconductor layer including a device region; a second semiconductor layer under the first semiconductor layer; a layer of conductive material between the first semiconductor layer and the second semiconductor layer; at least one contact extending to and contacting the layer of conductive material; and a device in the device region above the layer of conductive material.