Semiconductor arrangement
US11177368B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 15, 2019 |
| Grant date | Nov 16, 2021 |
| Priority date | — |
| Expiry date | Jun 11, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/292
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of semiconductor arrangement formation are provided. A method of forming the semiconductor arrangement includes forming a first nucleus on a substrate in a trench or between dielectric pillars on the substrate. Forming the first nucleus includes applying a first source material beam at a first angle relative to a top surface of the substrate and concurrently applying a second source material beam at a second angle relative to the top surface of the substrate. A first semiconductor column is formed from the first nucleus by rotating the substrate while applying the first source material beam and the second source material beam. Forming the first semiconductor column in the trench or between the dielectric pillars using the first source material beam and the second source material beam restricts the formation of the first semiconductor column to a single direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.