Semiconductor devices and methods for forming the same
US11177397B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 9, 2020 |
| Grant date | Nov 16, 2021 |
| Priority date | — |
| Expiry date | Feb 2, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/95
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for forming semiconductor devices includes providing a substrate with a conductive pad formed thereon; forming a transparent structure over the substrate, wherein the transparent structure includes a plurality of collimating pillars adjacent to the conductive pad; forming a light-shielding structure over the plurality of collimating pillars and the conductive pad; performing a cutting process to remove one or more materials directly above the conductive pad, while leaving remaining material to cover the conductive pad, wherein the material includes a portion of the light-shielding structure; and performing an etching process to remove the remaining material to expose the conductive pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.