Bias current variation correction for complementary metal-oxide-semiconductor (CMOS) temperature sensor
US11181426B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 5, 2019 |
| Grant date | Nov 23, 2021 |
| Priority date | — |
| Expiry date | May 3, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01K15/005
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A temperature sensor includes a current source to produce a first bias current and a second bias current, a plurality of diodes, and temperature estimation circuitry. The plurality of diodes includes at least a first diode to receive the first bias current and a second diode to receive the second bias current. The temperature estimate circuitry measures a first voltage bias across the first diode resulting from the first bias current and a second voltage bias across the second diode resulting from the second bias current, and estimates a temperature of an environment of the temperature sensor based at least in part on the first voltage bias and the second voltage bias. The temperature sensor further includes error detection circuitry to measure at least one of the first or second bias currents and determine an amount of error in the temperature estimate based at least in part on the measurement.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.