Methods for forming three-dimensional memory device with support structure and resulting three-dimensional memory device
US11183512B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2019 |
| Grant date | Nov 23, 2021 |
| Priority date | — |
| Expiry date | Jan 18, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a 3D memory device includes a memory stack, a plurality of channel structures, a slit structure, and a source structure. The memory stack may be over a substrate and may include interleaved a plurality of conductor layers and a plurality of insulating layers extending laterally in the memory stack. The plurality of channel structures may extend vertically through the memory stack into the substrate. The slit structure may extend vertically and laterally in the memory stack and divide the plurality of memory cells into at least one memory block. The slit structure may include a plurality of protruding portions and a plurality of recessed portions arranged vertically along a sidewall of the slit structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.