Image sensor including laser shield pattern
US11183525B2 · kind B2 · utility
2Cited by
4References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 2, 2019 |
| Grant date | Nov 23, 2021 |
| Priority date | — |
| Expiry date | May 2, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An image sensor includes a substrate including a plurality of unit pixels, a stack structure on the substrate, and a grid pattern between ones of the plurality of unit pixels on the stack structure. The grid pattern includes a lower grid pattern and an upper grid pattern on the lower grid pattern, the lower grid pattern including lanthanum oxide (LaO), amorphous silicon (a-Si), or polysilicon (poly-Si) and the upper grid pattern including a conductive material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.