Ha-Jin Lim
35Patents
7h-index
49Co-inventors
65Inventor score
Filing activity: Apr 15, 2005 → Oct 17, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7482677B2 | Dielectric structures having high dielectric constants, and non-volatile semiconductor memory devices having the dielectric structures | Electricity | 88 | Active |
| US7651729B2 | Method of fabricating metal silicate layer using atomic layer deposition technique | Chemistry; Metallurgy | 60 | Active |
| US7547951B2 | Semiconductor devices having nitrogen-incorporated active region and methods of fabricating the same | Electricity | 21 | Active |
| US7952118B2 | Semiconductor device having different metal gate structures | Electricity | 10 | Active |
| US7829953B2 | Semiconductor device and method of fabricating the same | Electricity | 9 | Active |
| US9859392B2 | Integrated circuit device and method of manufacturing the same | Electricity | 8 | Active |
| US7973309B2 | TEG pattern for detecting void in device isolation layer and method of forming the same | Electricity | 7 | Active |
| US7396777B2 | Method of fabricating high-k dielectric layer having reduced impurity | Electricity | 6 | Expired |
| US8476155B1 | Formation of a high-K crystalline dielectric composition | Electricity | 6 | Active |
| US8563411B2 | Semiconductor devices having a diffusion barrier layer and methods of manufacturing the same | Electricity | 4 | Active |
| US8502286B2 | Etch stop layers and methods of forming the same | Electricity | 3 | Active |
| US11183525B2 | Image sensor including laser shield pattern | Electricity | 2 | Active |
| US11152415B2 | Image sensor with separation pattern and image sensor module including the same | Electricity | 2 | Active |
| US8877579B2 | Methods of manufacturing semiconductor devices | Electricity | 2 | Active |
| US7615830B2 | Transistors with multilayered dielectric films | Electricity | 2 | Active |
| US8013402B2 | Transistors with multilayered dielectric films | Electricity | 1 | Active |
| US9728463B2 | Methods of manufacturing semiconductor devices | Electricity | 1 | Active |
| US8227308B2 | Method of fabricating semiconductor integrated circuit device | Electricity | 1 | Active |
| US8963227B2 | Semiconductor devices having a diffusion barrier layer and methods of manufacturing the same | Electricity | 1 | Active |
| US8951853B1 | Method of forming semiconductor device using Si-H rich silicon nitride layer | Electricity | 1 | Active |
| US7767512B2 | Methods of manufacturing a semiconductor device including CMOS transistor having different PMOS and NMOS gate electrode structures | Electricity | 0 | Active |
| US9023718B2 | Method of fabricating semiconductor device | Electricity | 0 | Active |
| US8252674B2 | Transistors with multilayered dielectric films and methods of manufacturing such transistors | Electricity | 0 | Active |
| US8673747B2 | Method of fabricating semiconductor device | Electricity | 0 | Active |
| US10312341B2 | Integrated circuit device and method of manufacturing the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.