Image sensor
US11183526B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 3, 2019 |
| Grant date | Nov 23, 2021 |
| Priority date | — |
| Expiry date | Jan 7, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
An image sensor including a semiconductor substrate having a first surface and a second surface, and a pixel region having a photoelectric conversion region; a first conductive pattern in a first trench defining the pixel region and extending from the first surface toward the second surface; a second conductive pattern in a second trench shallower than the first trench and defined between a plurality of active patterns on the first surface of the pixel region; a transfer transistor and a plurality of logic transistors on the active patterns; and a conductive line on the second surface and electrically connected to the first conductive pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.