Method for manufacturing semiconductor device
US11183635B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 2, 2020 |
| Grant date | Nov 23, 2021 |
| Priority date | — |
| Expiry date | Sep 2, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/883
Abstract
A method for forming a semiconductor device is disclosed. The method for forming the semiconductor device includes forming a first sacrificial film over a target layer to be etched, forming a first partition mask over the first sacrificial film, forming a first sacrificial film pattern by etching the first sacrificial film using the first partition mask, forming a first spacer at a sidewall of the first sacrificial film pattern, and forming a first spacer pattern by removing the first sacrificial film pattern. The first partition mask includes a plurality of first line-shaped space patterns extending in a first direction. A width of at least one space pattern located at both edges from among the plurality of first space patterns is smaller than a width of each of other space patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.