Patent · US Active

Method for determining properties of an EUV source

US11187989B2 · kind B2 · utility

1Cited by

0References

20Claims

0Family size

Assignee

Carl Zeiss SMT GmbH · DE

Inventors

Timo Laufer · Stuttgart, DE
Markus Hauf · Ulm, DE
Ulrich Mueller · Hamburg, DE

Key dates

Filing date	Mar 19, 2020
Grant date	Nov 30, 2021
Priority date	—
Expiry date	Mar 19, 2040

Classification

Technology area (CPC G)Physics
CPC primaryG03F7/70891
WIPO fieldOptics
WIPO sectorInstruments

Abstract

The disclosure provides a method for determining at least one property of an EUV source in a projection exposure apparatus for semiconductor lithography, wherein the property is determined on the basis of the electromagnetic radiation emanating from the EUV source, and wherein a thermal load for a component of the projection exposure apparatus is determined and the property is deduced on the basis of the thermal load determined.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.