Etching method and plasma processing apparatus
US11189469B2 · kind B2 · utility
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1References
17Claims
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Key dates
| Filing date | Mar 28, 2019 |
| Grant date | Nov 30, 2021 |
| Priority date | — |
| Expiry date | Mar 28, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3341
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching method for etching an organic film on a substrate inside a processing container includes controlling a temperature of the substrate to be at most −35° C., and supplying a gas containing O into an inside of the processing container.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.