Resistance element and manufacturing method of resistance element
US11189685B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2019 |
| Grant date | Nov 30, 2021 |
| Priority date | — |
| Expiry date | Jul 2, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/474
Abstract
Provided is a resistance element, including: a semiconductor substrate; a first insulating film stacked on the semiconductor substrate; a resistance layer selectively stacked on the first insulating film; a first auxiliary film separated from the resistance layer; a second auxiliary film separated from the resistance layer in a direction different from that of the first auxiliary film; a second insulating film stacked on the first insulating film to cover the resistance layer, and the first auxiliary film and the second auxiliary film; a first electrode connected to the resistance layer and stacked on the second insulating film disposed on an upper side of the first auxiliary film; and a second electrode connected to the resistance layer by being separated from the first electrode and stacked on the second insulating film on the upper side of the second auxiliary film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.