Split gate semiconductor with non-uniform trench oxide
US11189702B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2019 |
| Grant date | Nov 30, 2021 |
| Priority date | — |
| Expiry date | Jan 30, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
Split gate semiconductor with non-uniform trench oxide. A metal oxide semiconductor field effect transistor (MOSFET) comprises a plurality of parallel trenches. Each such trench comprises a first electrode coupled to a gate terminal of the MOSFET and a second electrode, physically and electrically isolated from the first electrode. The second electrode is beneath the first electrode in the trench. The second electrode includes at least two different widths at different depths below a primary surface of the MOSFET. The trenches may be formed in an epitaxial layer. The epitaxial layer may have a non-uniform doping profile with respect to depth below a primary surface of the MOSFET. The second electrode may be electrically coupled to a source terminal of the MOSFET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.