Gate induced drain leakage robust bootstrapped switch
US11190178B1 · kind B1 · utility
2Cited by
12References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 28, 2020 |
| Grant date | Nov 30, 2021 |
| Priority date | — |
| Expiry date | Oct 28, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/687
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Examples described herein provide an apparatus having a circuit with a grounding circuit and a switch. The apparatus generally includes a gate induced drain leakage (GIDL) protection circuit coupled to the switch and to an output voltage. The GIDL protection circuit may include a switch protection circuit configured to maintain a drain voltage of the switch less than a first supply voltage (Vdd) when the circuit is in an OFF state; and a ground protection circuit configured to maintain a drain voltage of the grounding circuit less than the first supply voltage when the circuit is in an ON state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.