Semiconductor substrate for evaluation and method using same to evaluate defect detection sensitivity of inspection device
US11193895B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2017 |
| Grant date | Dec 7, 2021 |
| Priority date | — |
| Expiry date | Oct 30, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06T2207/30148
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
It is necessary to guarantee performance by quantitatively evaluating the defect detection sensitivity of an inspection device for using the mirror electron image to detect defect in a semiconductor substrate. The size and position of accidentally formed defects are random, however, and this type of quantitative evaluation has been difficult. This semiconductor substrate 101 for evaluation is for evaluating the defect detection sensitivity of an inspection device and comprises a plurality of first indentations 104 that are formed through the pressing, with a first pressing load, of an indenter having a prescribed hardness and shape into the semiconductor substrate for evaluation. Further, a mirror electron image of the plurality of first indentations of the semiconductor substrate for evaluation is acquired, and the defect detection sensitivity of an inspection device is evaluated through the calculation of the defect detection rate of the plurality of first indentations in the acquired mirror electron image.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.