Method of manufacture using complementary conductivity-selective wet-etching techniques for III-nitride materials and devices
US11195722B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2018 |
| Grant date | Dec 7, 2021 |
| Priority date | — |
| Expiry date | May 19, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30635
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for wet-etching semiconductor samples and devices fabricated from the same are disclosed. The methods can be for selectively wet-etching a semiconductor sample comprising selecting a liquid-phase solution such that when the semiconductor sample is etched with the liquid-phase solution, at least a portion of one of a first doped region or a second doped region is etched at a greater rate than at least a portion of the other of the first doped region or the second doped region; and wet-etching, with the liquid-phase solution, the at least a portion of one of the first doped region or the second doped region at a first etch rate and the at least a portion of the other of the first doped region or the second doped region at a second etch rate; wherein the first etch rate can be greater than the second etch rate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.